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IXFN102N30P Hoja de datos - IXYS CORPORATION

IXFN102N30P image

Número de pieza
IXFN102N30P

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
84.2 kB

Fabricante
IXYS
IXYS CORPORATION IXYS

PolarHV™ HiPerFET Power MOSFET

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode


FEATUREs
• International standard package
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
    - easy to drive and to protect

Advantages
• Easy to mount
• Space savings
• High power density

Page Link's: 1  2  3  4  5 

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