HiPerFET Power MOSFETs Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
FEATUREs
• IXYS advanced low gate charge process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification
Advantages
• Easy to mount
• Space savings
• High power density