CoolMOS™ 1) Power MOSFET

Electrically isolated back surface 2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
    - high power dissipation
    - isolated mounting surface
    - 2500 V electrical isolation
    - low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th generation
    - high blocking capability
    - lowest resistance
    - avalanche rated for unclamped inductive switching (UIS)
    - low thermal resistance due to reduced chip thickness
• Enhanced total power density

APPLICATIONs
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter

Advantages
• Easy assembly: no screws or isolation foils required
• Space savings
• High power density
• High reliability