IXTP102N15T Hoja de datos - Inchange Semiconductor
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IXTP102N15T
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Inchange Semiconductor
• FEATURES
• Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
• APPLICATION
• DC/DC Converters
• High Speed Power Switching Applications
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