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IXTP3N120(2004) Hoja de datos - IXYS CORPORATION

IXTP3N110 image

Número de pieza
IXTP3N120

componentes Descripción

Other PDF
  lastest PDF  

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page
4 Pages

File Size
559.9 kB

Fabricante
IXYS
IXYS CORPORATION IXYS

High Voltage Power MOSFETs

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt


FEATUREs
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
   Switching (UIS)
• Molding epoxies meet UL 94 V-0
   flammability classification

Advantages
• Easy to mount
• Space savings
• High power density


Número de pieza
componentes Descripción
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High Voltage Power MOSFETs
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