Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.

FEATUREs
• Low RDS(on)
• Fast Switching
• Single Event Effect (SEE) Hardened
• Low Total Gate Charge
• Simple Drive Requirements
• Hermetically Sealed
• Ceramic Eyelets
• Electrically Isolated
• Light Weight
• ESD Rating: Class 1C per MIL-STD-750,
   Method 1020