Fabricante
![Micropac](/logo/Micropac.png)
Micropac Industries
![Micropac](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
FEATUREs:
• High Reliability
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation
APPLICATIONs:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
Número de pieza
componentes Descripción
PDF
Fabricante
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