[TELEFUNKEN electronic]

Construction : Emitter: GaAs IR Emitting Diode
                       Detector: Silicon NPN Epitaxial Planar Phototransistor

APPLICATIONs: Gaivanically separated circuits, non-interaction switches

FEATUREs:
● DC isolation test voltage Vis 4.4 kV
● Low coupling capacity CK typ. 0.3 pF
● Test class 25/100.21, DIN 40045
● Current transfer ratio in groups selected
● Low temperature coefficient of CTR