K1529 - Toshiba Hoja de datos

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K1529(1998) Hoja de datos - Toshiba

Número de pieza

K1529

componentes Descripción

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

Other PDF

2006 lastest PDF

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page

3 Pages

File Size

176.3 kB

Fabricante

Toshiba

HIGH-POWER AMPLIFIER APPLICATION

● High Breakdown Voltage : VDSS = 180 V
● High Forward Transfer Admittance : |Yfs| = 4.0 S (Typ.)
● Complementary to 2SJ200

Número de pieza

componentes Descripción

PDF

Fabricante

2SK1358

Field Effect Transistor Silicon N Channel MOS Type

Ver

New Jersey Semiconductor

2SK241

Silicon N Channel MOS Type Field Effect Transistor

Ver

Toshiba

2SK525

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

Ver

Toshiba

2SK3279

N-channel MOS Type Silicon Field Effect Transistor

Ver

SANYO -> Panasonic

2SK2320

Field Effect Transistor Silicon N-Channel MOS Type

Ver

Unspecified

K2078

Field Effect Transistor Silicon N Channel MOS Type

Ver

Toshiba

2SK1769

Field Effect Transistor Silicon N Channel MOS Type

Ver

Toshiba

2SK1310

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

Ver

Toshiba

2SK674

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

Ver

Toshiba

FTD2011A

N channel MOS type silicon field effect transistor ( Rev : V2 )

Ver

SANYO -> Panasonic

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