K15J60U Hoja de datos - Toshiba
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K15J60U
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Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) ( Rev : 2013 )
Toshiba
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