datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Toshiba  >>> K170 PDF

K170(1997) Hoja de datos - Toshiba

2SK170 image

Número de pieza
K170

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
4 Pages

File Size
214.4 kB

Fabricante
Toshiba
Toshiba Toshiba

LOW NOISE AUDIO AMPLIFIER APPLICATIONS

• Recommended for first stages of EQ and M.C. Head Amplifiers.
• High |Yfs|: |Yfs| = 22 mS (Typ.) 
                          (VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High Breakdown Voltage: VGDS = −40 V
• Low Noise: En = 0.95 nV/Hz1/2 (Typ.) 
                          (VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High Input Impedance: IGSS = −1 nA (Max.) (VGS = −30 V)


Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Ver
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Ver
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Ver
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Ver
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Ver
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]