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K1S161611A-BI70 Hoja de datos - Samsung

DS_K1S161611A image

Número de pieza
K1S161611A-BI70

Other PDF
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page
10 Pages

File Size
126.5 kB

Fabricante
Samsung
Samsung Samsung

1M x 16 bit Uni-Transistor CMOS RAM

GENERAL DESCRIPTION
The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.


FEATURES
• Process Technology: CMOS
• Organization: 1M x16 bit
• Power Supply Voltage: 2.7V~3.1V
• Three State Outputs
• Compatible with Low Power SRAM
• Dual Chip selection support
• Package Type: 48-FBGA-6.00x7.00

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