Field Effect Transistor
Silicon N Channel MOS Type (π-MOS IV)
High Speed, High Current Switching Applications

FEATUREs
● Low Drain-Source ON Resistance
   - RDS(ON) = 0.24Ω (Typ.)
● High Forward Transfer Amittnace
   -|Yfs| = 15S (Typ.)
● Low Leakage Current
   - IDSS = -100μA (Max.)(VDS = 500V)
● Enhancement-Mode
   - Vth = 2.0 ~ 4.0V (VDS = -10V, ID = 1mA)