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K2957 Hoja de datos - Hitachi -> Renesas Electronics

2SK2957 image

Número de pieza
K2957

componentes Descripción
Silicon N Channel MOS FET High Speed Power Switching / 2SK2957(L), 2SK2957(S)

Other PDF
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PDF
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page
9 Pages

File Size
46.5 kB

Fabricante
Hitachi
Hitachi -> Renesas Electronics Hitachi

·  Low on-resistance RDS(on)= 7mW typ.
 

·  4V gate drive devices.
 

·  High speed switching

Page Link's: 1  2  3  4  5  6  7  8  9 

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2SK2736
Silicon N Channel DV-L MOS FET High Speed Power Switching
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Silicon N Channel DV–L MOS FET High Speed Power Switching
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Silicon N Channel DV-L MOS FET High Speed Power Switching
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Hitachi -> Renesas Electronics
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2SJ471
Silicon P Channel DV–L MOS FET High Speed Power Switching
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Hitachi -> Renesas Electronics
RJK5015DPM
Silicon N-Channel MOS FET High Speed Power Switching
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RJK5014DPK
Silicon N-Channel MOS FET High Speed Power Switching
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Renesas Electronics
RJK5013DPK
Silicon N-Channel MOS FET High Speed Power Switching
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Renesas Electronics
RJK5013DPP
Silicon N-Channel MOS FET High Speed Power Switching
Ver
Renesas Electronics

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