K3061 Hoja de datos - NEC => Renesas Technology
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K3061
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NEC => Renesas Technology
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
* Low on-state resistance
RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)
RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)
* Low Ciss: Ciss= 5200 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package
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