K30A06N1 Hoja de datos - Toshiba
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K30A06N1
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9 Pages
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Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Features
(1) Low drain-source on-resistance: RDS(ON)= 12.2 mΩ(typ.) (VGS= 10 V)
(2) Low leakage current: IDSS= 10 µA (max) (VDS= 60 V)
(3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA)
APPLICATIONs
• Switching Voltage Regulators
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