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K4144 Hoja de datos - Renesas Electronics

2SK4144 image

Número de pieza
K4144

componentes Descripción

Other PDF
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PDF
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page
10 Pages

File Size
294.3 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Low on-state resistance
   RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A)
   RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• Low input capacitance
   Ciss = 5500 pF TYP. (VDS = 10 V)
• Built-in gate protection diode


Número de pieza
componentes Descripción
PDF
Fabricante
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Ver
Renesas Electronics

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