K50MCH3 Hoja de datos - Infineon Technologies
Número de pieza
K50MCH3
componentes Descripción
Other PDF
no available.
PDF
page
16 Pages
File Size
1.6 MB
Fabricante
Infineon Technologies
Features:
High speed H3 technology offers:
• High efficiency in hard switching and resonant topologies
• 10µsec short circuit withstand time at Tvj=175°C
• Easy paralleling capability due to positive temperature
coefficient in VCE(sat)
• Low EMI
• Low Gate Charge Qg
• Very soft, fast recovery full current anti-parallel diode
• Maximum junction temperature 175°C
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
//www.infineon.com/igbt
APPLICATIONs:
• Industrial UPS
• Charger
• Energy Storage
• Three-level Solar String Inverter
• Welding
Número de pieza
componentes Descripción
PDF
Fabricante
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Infineon Technologies
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Infineon Technologies
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Infineon Technologies
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Infineon Technologies
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Infineon Technologies
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Infineon Technologies
Low Vce(sat) IGBT in TRENCHSTOP™2 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled Diode
Infineon Technologies
Low Vce(sat) IGBT in TRENCHSTOP™ 2 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled Diode ( Rev : 2017 )
Infineon Technologies
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