K596-TO-92S Hoja de datos - Jiangsu Changjiang Electronics Technology Co., Ltd

Número de pieza

K596-TO-92S

componentes Descripción

TO-92S Plastic-Encapsulate Transistors

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3 Pages

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589.6 kB

Fabricante

Jiangsu Changjiang Electronics Technology Co., Ltd 

Si N-CHANNEL JUNCTION FET

FEATURES

   Power dissipation

      PCM: 0.1W（ Tamb=25℃）

   Gate Current

      I G: 10mA

   Drain current

      I D: 1mA

   Drain-Source voltage

      BVGDO: -20 V

   Operating and storage junction temperature range

      TJ， Tstg: -55℃ to +150℃

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