GENERAL DESCRIPTION
The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM.

FEATURES
• Power Supply voltage : 2.7V to 3.3V
• Organization
   - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
   - SRAM : 1,048,576 x 8 / 524,288 x 16 bit
• Access Time (@2.7V)
   - Flash : 70 ns, SRAM : 55 ns
• Power Consumption (typical value)
   - Flash Read Current : 14 mA (@5MHz)
      Program/Erase Current : 15 mA
      Standby mode/Autosleep mode : 5 mA
      Read while Program or Read while Erase : 25 mA
   - SRAM Operating Current : 22 mA
      Standby Current : 0.5 mA
• Secode(Security Code) Block : Extra 64KB Block (Flash)
• Block Group Protection / Unprotection (Flash)
• Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
• Flash Endurance : 100,000 Program/Erase Cycles Minimum
• SRAM Data Retention : 1.5 V (min.)
• Industrial Temperature : -40°C ~ 85°C
• Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch
                   1.2mm(max.) Thickness