datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Toshiba  >>> K6A65D PDF

K6A65D Hoja de datos - Toshiba

K6A65D image

Número de pieza
K6A65D

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
330 kB

Fabricante
Toshiba
Toshiba Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Ver
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]