GENERAL DESCRIPTION
The K6R1008C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward.

FEATURES
• Fast Access Time 10,12(Max.)
• Power Dissipation
   Standby
      (TTL) : 20mA(Max.)
      (CMOS) : 5mA(Max.)
   Operating
      K6R1008C1D-10: 65mA(Max.)
      K6R1008C1D-12: 55mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
   K6R1008C1D-J : 32-SOJ-400
   K6R1008C1D-T : 32-TSOP2-400CF
• Operating in Commercial and Industrial Temperature range.