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K7R163682B Hoja de datos - Samsung

K7R160982B image

Número de pieza
K7R163682B

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19 Pages

File Size
417.9 kB

Fabricante
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K7R163682B,K7R161882B and K7R160982B are 18,874,368-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.
They are organized as 524,288 words by 36bits for K7R163682B, 1,048,576 words by 18 bits for K7R161882B and 2,097,152 words by 9bits for K7R160982B.


FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future freguency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
1.8V+0.1V/-0.1V for 1.8V I/O.
• Separate independent read and write data ports with concurrent read and write operation
• HSTL I/O
• Full data coherency, providing most current data .
• Synchronous pipeline read with self timed early write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
• Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data traceability.
• Single address bus.
• Byte write (x9, x18, x36) function.
• Sepatate read/write control pin(R and W)
• Simple depth expansion with no data contention.
• Programmable output impenance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 13x15mm

 

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