TK8A55DA

TOSHIBA Field Effect Transistor  Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications
•  Low drain-source ON-resistance: RDS (ON)= 0.9 Ω(typ.)
•  High forward transfer admittance: |Yfs| = 3.0 S (typ.)
•  Low leakage current: IDSS= 10 μA (max) (VDS= 550 V)
•  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)