General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, fast reverse recovery time, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES
• VDSS=600V, ID=10A
• Drain-Source ON Resistance :
   RDS(ON)(Max)=0.69Ω @VGS=10V
• Qg(typ.)= 29.5nC
• trr(typ.)=150nS