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L412 Hoja de datos - IXYS CORPORATION

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Número de pieza
L412

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4 Pages

File Size
88.5 kB

Fabricante
IXYS
IXYS CORPORATION IXYS

High Voltage BIMOSFET™ in High Voltage ISOPLUS i4-PAC™

Monolithic Bipolar MOS Transistor


FEATUREs
• High Voltage BIMOSFETTM
    - substitute for high voltage MOSFETs with significantly lower voltage drop
    - fast switching for high frequency operation
    - reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
    - isolated back surface
    - enlarged creepage towards heatsink
    - enlarged creepage between high voltage pins
    - application friendly pinout
    - high reliability
    - industry standard outline


APPLICATIONs
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators

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