DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4passivation and is available in a die form or in a flanged ceramic package (P100) for high-power applications, or in the SOT-89 plastic package.

FEATURES
• +27 dBm Typical Power at 1800 MHz
• 15 dB Typical Power Gain at 1800 MHz
• 1.0 dB Typical Noise Figure
• +42 dBm Typical Intercept Point
• Color-coded by IDSSrange