DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs)  pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.

FEATURES
¨  31dBm Output Power at 1-dB Compression at 15 GHz
¨  9 dB Power Gain at 15 GHz
¨  42 dBm Output IP3 at 15GHz
¨  60% Power-Added Efficiency