General Description
The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.

FEATUREs
✦ -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V
✦ ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V
✦ ■ Super high density cell design for extremely low
   RDC(ON)
✦ ■ SOT23 Package

APPLICATIONs
✧ Portable Media Players
✧ Cellular and Smart mobile phone
✧ LCD
✧ DSC Sensor
✧ Wireless Card