General Description
The LPM9013 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

FEATUREs
■ -20V/-2.6A,RDC(ON)=125mΩ(typ.)@VGS=-2.5V
■ -20V/-3.0A,RDC(ON)=98mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
   low RDC(ON)
■ SOT23 Package

APPLICATIONs
✧ Portable Media Players
✧ Cellular and Smart mobile phone
✧ LCD
✧ DSC Sensor
✧ Wireless Card