Description
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
FEATUREs
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
APPLICATIONs
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations