DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.
• Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

APPLICATIONS
   Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.