General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
45.0 Watts Single Ended
Package Style LX2

HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE