DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated common-emitter structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Internal input and output prematching ensures a good stability and allows an easier design of circuits.

APPLICATIONS
   Intended for use in common-emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz.
o