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M10162040108X0PWAY Hoja de datos - Renesas Electronics

M1004204 image

Número de pieza
M10162040108X0PWAY

componentes Descripción

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page
52 Pages

File Size
1.1 MB

Fabricante
Renesas
Renesas Electronics Renesas

Description
   Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile.


FEATUREs
◾ Interface
   • Serial Peripheral Interface QSPI (4-4-4)
   • Single Data Rate Mode: 108MHz
   • Double Data Rate Mode: 54MHz
◾ Technology
   • 40nm pMTJ STT-MRAM
      Virtually unlimited Endurance and Data Retention (see
      Endurance and Data Retention specification in Table 31)
◾ Density
   • 4Mb, 8Mb, 16Mb
◾ Operating Voltage Range
   • VCC: 1.71V – 2.00V
   • VCC: 2.70V – 3.60V
◾ Operating Temperature Range
   • Industrial: -40°C to 85°C
   • Industrial Plus: -40°C to 105°C
◾ Packages
   • 8-pad DFN (WSON) (5.0mm x 6.0mm)
   • 8-pin SOIC (5.2mm x 5.2mm)
◾ Data Protection
   • Hardware Based: Write Protect Pin (WP#)
      Software Based: Address Range Selectable through
      Configuration bits (Top/Bottom, Block Protect[2:0])
◾ Identification
   • 64-bit Unique ID
   • 64-bit User Programmable Serial Number
◾ Augmented Storage Array
   • 256-byte User Programmable with Write Protection
◾ Supports JEDEC Reset
◾ RoHS & REACH Compliant


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