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M29F016D55N6 Hoja de datos - STMicroelectronics

M29F016D image

Número de pieza
M29F016D55N6

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37 Pages

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547.1 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

SUMMARY DESCRIPTION
   The M29F016D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.


FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VCC = 5V ±10% for PROGRAM, ERASE and
      READ OPERATIONS
◾ ACCESS TIME: 55, 70, 90ns
◾ PROGRAMMING TIME
   – 10µs per Byte typical
◾ 32 UNIFORM 64Kbyte MEMORY BLOCKS
◾ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program algorithms
◾ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during
      Erase Suspend
◾ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
◾ TEMPORARY BLOCK UNPROTECTION
   MODE
◾ COMMON FLASH INTERFACE
   – 64 bit Security Code
◾ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: ADh
◾ ECOPACK® PACKAGES AVAILABLE


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