Description
The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F200B is fully backward compatible with the M29F200.

FEATUREs
■ Single 5V±10% supply voltage for Program, Erase and Read operations
■ Access time: 45, 50, 70, 90ns
■ Programming time
  – 8µs per Byte/Word typical
■ 7 memory blocks
  – 1 Boot Block (Top or Bottom location)
  – 2 parameter and 4 main blocks
■ Program/Erase controller
  – Embedded Byte/Word Program algorithm
  – Embedded Multi-Block/Chip Erase algorithm
  – Status Register polling and toggle bits
  – Ready/Busy output pin
■ Erase Suspend and Resume modes
  – Read and Program another block during Erase Suspend
■ Unlock Bypass Program command
  – Faster Production/Batch Programming
■ Temporary Block Unprotection mode
■ Low power consumption
  – Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ 20 years data retention
  – Defectivity below 1 ppm/year
■ Electronic Signature
  – Manufacturer code: 0020h
  – Top Device code M29F200BT: 00D3h
  – Bottom Device code: M29F200BB: 00D4h
■ ECOPACK® packages available