Description
   M3xxx316 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 32Mbit. MRAM technology is analogous to Flash technology with SRAM compatible 35ns/35ns and 45ns/45ns read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile. This makes MRAM a very reliable and fast non-volatile memory solution.

FEATUREs
• Interface
   ◾ Parallel Asynchronous x16
• Technology
   ◾ 40nm pMTJ STT-MRAM
• Data Retention (see Table 16. Endurance
   and Data Retention Density)
   ◾ 4Mb, 8Mb, 16Mb, 32Mb
• Operating Voltage Range
   ◾ VCC: 2.70V – 3.60V
• Operating Temperature Range
   ◾ Industrial: -40°C to 85°C
   ◾ Industrial Plus: -40°C to 105°C
• RoHS Compliant & REACH Compliant
• Packages
   ◾ 44-pin TSOP (10mm x 18mm)
   ◾ 54-pin TSOP (10mm x 22mm)
   ◾ 48-ball FBGA (10mm x 10mm)
• Memory Array Organization
   ◾ 4Mbit
      ◾ 262,144 x 16
   ◾ 8Mbit
      ◾ 524,288 x 16
   ◾ 16Mbit
      ◾ 1,048,576 x 16
   ◾ 32Mbit
      ◾ 2,097,152 x 16

Typical Applications
• Ideal for applications that must store and retrieve
   data without incurring large latency penalties
• Factory Automation
• Multifunction Printers
• Industrial Control And Monitoring
• Medical Diagnostics
• Data Switches And Routers
• Smart Meter