SUMMARY DESCRIPTION
The M30L0R7000T0/B0 is a 128 Mbit (8Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry and a 1.7V to 2.0V VDDQ supply for the Input/Output pins. An optional 9V VPP power supply is provided to speed up factory programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 1.7V to 2.0V for program, erase and
      read
   – VDDQ = 1.7V to 2.0V for I/O Buffers
   – VPP = 9V for fast program (12V tolerant)
■ SYNCHRONOUS / ASYNCHRONOUS READ
   – Synchronous Burst Read mode: 54MHz
   – Asynchronous Page Read mode
   – Random Access: 85ns
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
   – 10µs typical Word program time using
      Buffer Program
■ MEMORY ORGANIZATION
   – Multiple Bank Memory Array: 8 Mbit
      Banks
   – Parameter Blocks (Top or Bottom
   location)
■ DUAL OPERATIONS
   – program/erase in one Bank while read in
      others
   – No delay between read and write
      operations
■ BLOCK LOCKING
   – All blocks locked at power-up
   – Any combination of blocks can be locked
      with zero latency
   – WP for Block Lock-Down
   – Absolute Write Protection with VPP = VSS
■ SECURITY
   – 64 bit unique device number
   – 2112 bit user programmable OTP Cells
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code: 88C4h.
   – Bottom Device Code: 88C5h
■ PACKAGE
   – Compliant with Lead-Free Soldering
      Processes
   – Lead-Free Versions