SUMMARY DESCRIPTION
The M30LW128D is a 128 Mbit device that is composed of two separate 64 Mbit M58LW064D Flash memories. The device can be erased electrically at block level and programmed in-system using a 2.7V to 3.6V (VDD) supply for the circuitry and a 1.8V to VDD (VDDQ) supply for the Input/Output pins.
The bus width can be configured for x8 or x16 for the devices available in the TSOP56 (14 x 20 mm) and TBGA64 (10x13mm, 1mm pitch) packages. The bus width is set to x16 for the devices available in the LFBGA88 (8x10mm, 0.8mm pitch) package.

FEATURES SUMMARY
■ TWO M58LW064D 64Mbit FLASH MEMORIES
   STACKED IN A SINGLE PACKAGE
■ WIDE x8 or x16 DATA BUS for HIGH
   BANDWIDTH
■ SUPPLY VOLTAGE
   – VDD = 2.7 to 3.6V for Program, Erase and
      Read operations
   – VDDQ = 1.8 to VDD for I/O buffers
■ ACCESS TIME
   – Random Read 110ns
   – Page Mode Read 110/25ns
■ PROGRAMMING TIME
   – 16 Word Write Buffer
   – 16µs Word effective programming time
■ 128 UNIFORM 64 KWord/128KByte MEMORY
   BLOCKS
■ BLOCK PROTECTION/ UNPROTECTION
■ PROGRAM and ERASE SUSPEND
■ 128 bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per
   BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code M30LW128D: 8817h