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M45PE80-VMF6G

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36 Pages

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

SUMMARY DESCRIPTION
The M45PE80 is a 8Mbit (1M x 8 bit) Serial Paged Flash Memory accessed by a high speed SPIcompatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.
The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 bytes.
The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction.


FEATURES SUMMARY
■ 8Mbit of Page-Erasable Flash Memory
■ Page Write (up to 256 Bytes) in 11ms (typical)
■ Page Program (up to 256 Bytes) in 1.2ms (typical)
■ Page Erase (256 Bytes) in 10ms (typical)
■ Sector Erase (512 Kbit)
■ 2.7 to 3.6V Single Supply Voltage
■ SPI Bus Compatible Serial Interface
■ 25MHz Clock Rate (maximum)
■ Deep Power-down Mode 1µA (typical)
■ Electronic Signature
    – JEDEC Standard Two-Byte Signature (4014h)
■ More than 100,000 Write Cycles
■ More than 20 Year Data Retention

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Número de pieza
componentes Descripción
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Fabricante
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface ( Rev : 2004 )
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16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
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1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
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