datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Samsung  >>> M470L6423EN0-CLB3 PDF

M470L6423EN0-CLB3 Hoja de datos - Samsung

M470L6423EN0-CLB3 image

Número de pieza
M470L6423EN0-CLB3

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
13 Pages

File Size
140 kB

Fabricante
Samsung
Samsung Samsung

Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), double (512MB) sided
• SSTL_2 Interface
• 54pin sTSOP(II)-300 package

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
SDRAM Unbuffered SODIMM
Ver
Samsung
DDR SDRAM SODIMM
Ver
Samsung
DDR SDRAM SODIMM
Ver
Micron Technology
DDR SDRAM SODIMM ( Rev : 2008 )
Ver
Micron Technology
DDR SDRAM SODIMM
Ver
Samsung
256MB – 2x16Mx72 DDR SDRAM UNBUFFERED
Ver
White Electronic Designs Corporation
128MB – 16Mx72 DDR SDRAM UNBUFFERED
Ver
White Electronic Designs Corporation
128MB - 16Mx64 DDR SDRAM UNBUFFERED
Ver
White Electronic Designs Corporation
1GB Unbuffered DDR SDRAM DIMM
Ver
Elpida Memory, Inc
1GB Unbuffered DDR SDRAM DIMM
Ver
Elpida Memory, Inc

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]