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M5M29KB Hoja de datos - Renesas Electronics

M5M29KB image

Número de pieza
M5M29KB

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page
32 Pages

File Size
270.3 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
   The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank.


FEATURES
   Access time Random 70ns (Max.)
                       Page 25ns(Max.)
   Supply voltage VCC= 3.0 ~ 3.6V
   Ambient temperature Ta=-40 ~ 85 °C
   Package 48pin TSOP(Type-I), Lead pitch 0.5mm
                  Outer-lead finishing : Sn-Cu


APPLICATION
   Digital Cellar Phone, Telecommunication,
   PDA, Car Navigation System, Video Game Machine


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