Description
M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabricated on a OMCVD epitaxial wafer using a process optimized for high device uniformity and extremely low parasitics. The diode exhibits low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.

FEATUREs
♦ Low Series Resistance
♦ Low Capacitance
♦ Millimeter Wave Switching
♦ Millimeter Wave Cutoff Frequency
♦ 5 Nanosecond Switching Speed
♦ Can be Driven by a Buffered +5V TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant

APPLICATIONs
   The ultra low capacitance of the MA4AGBLP912
   device makes it ideally suited for use through
   W-band. The low RC product and low profile of the
   beamlead PIN diode allows for use in microwave
   and millimeter wave switch designs, where low
   insertion loss and high isolation are required. The
   operating bias conditions of +10mA for the low loss
   state, and 0V, for the isolation state permits the use
   of a simple +5V TTL gate driver. AlGaAs, beamlead
   diodes, can be used in switching arrays on radar
   systems, high speed ECM circuits, optical
   switching networks, instrumentation, and other
   wideband multi-throw switch assemblies.