DESCRIPTION
The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Tech’s patented heterojunction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.

FEATURES
• Ultra Broad Bandwidth : 50 MHz to 50 GHz
• Functional Bandwidth : 50 MHz to 70 GHz
• 0.7 dB Insertion Loss
• 33 dB Isolation at 50 GHz
• Low Current consumption
   • -10mA for low loss state
   • +10mA for Isolation state
• M/A-COM Tech’s unique AlGaAs
   hetero-junction anode technology
• Silicon Nitride Passivation
• Polymer Scratch protection

APPLICATIONS
   The high electron mobility of AlGaAs and the low
   capacitance of the PIN diodes used makes this switch
   ideal for fast response, high frequency, multi-throw
   switch designs. AlGaAs PIN diode switches are an
   ideal choice for switching arrays in radar systems,
   radiometers, test equipment and other multi-assembly
   components.