Description and Applications
The MA4E2037 and MA4E2038 single diodes, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode air bridge during handling.
The high cut-off frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors.

FEATUREs
• Low Series Resistance
• Low Capacitance
• High Cut-Off Frequency
• Silicon Nitride Passivation
• Multiple Configurations