Description
This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.

FEATUREs
♦ Surface Mount
♦ No Wire Bonding Required
♦ Rugged Silicon-Glass Construction
♦ Silicon Nitride Passivation
♦ Polymer Scratch Protection
♦ Low Parasitic Capacitance and Inductance
♦ High Average and Peak Power Handling
♦ RoHS Compliant