Description and Applications 
This device is a silicon glass PIN diode chip fabricated with M/A-COM Tech Solutions patented HMIC process. This 80μm I-region length device features six silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of a pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection.

FEATUREs
♦ No Wire Bonds Required
♦ Rugged Silicon-Glass Construction
♦ Silicon Nitride Passivation
♦ Polymer Scratch Protection
♦ Ultra-Low Parasitic Capacitance and Inductance
♦ Higher RF C.W. Power Handling
♦ Better Performance than Packaged Devices