General Description
The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor the LDMOS drain current over a range of 20mA to 5A. The MAX11008 supports up to two external diode-connected transistors to monitor the LDMOS temperatures while an internal temperature sensor measures the local die temperature.
FEATUREs
✦ On-Chip 4Kb EEPROM for Storing LDMOS Bias
Characteristics
✦ Integrated High-Side Current-Sense PGA with
Gain of 2, 10, or 25
✦ ±0.75% Accuracy for Sense Voltage Between
+75mV and +1250mV
✦ Full-Scale Sense Voltage
+100mV with a Gain of 25
+250mV with a Gain of 10
+1250mV with a Gain of 2
✦ Common-Mode Range, LDMOS Drain Voltage:
+5V to +32V
✦ Adjustable Low-Noise 0 to AVDD Output Gate
Bias Voltage Range
✦ Fast Clamp to AGND for LDMOS Protection
✦ 12-Bit DAC Control of Gate with Temperature
✦ Internal Die Temperature Measurement
✦ 2-Channel External Temperature Measurement
through Remote Diodes
✦ Internal 12-Bit ADC Measurement for
Temperature, Current, and Voltage Monitoring
✦ User-Selectable Serial Interface
400kHz/1.7MHz/3.4MHz I2C-Compatible Interface
16MHz SPI-/MICROWIRE-Compatible Interface
APPLICATIONs
Cellular Base Stations
Microwave Radio Links
Feed-Forward Power Amps
Transmitters
Industrial Process Control