DESCRIPTION
The FUJITSU MB82DBS02163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DBS02163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. The MB82DBS02163C adopts asynchronous page mode and synchronous burst mode for fast memory access as user configurable options.
This MB82DBS02163C is suited for mobile applications such as Cellular Handset and PDA.

*: FCRAM is a trademark of Fujitsu Limited, Japan

FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tCE = 70 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Burst Read/Write Access Capability : tAC = 12 ns Max
• Low Voltage Operating Condition : VDD = +1.65 V to +1.95 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 30 mA Max
                                             IDDS1 = 80 µA Max
• Various Power Down mode : Sleep
                                                4 M-bit Partial
                                                8 M-bit Partial
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package